Appl Phys Lett 2003, 82:2443–2445.CrossRef 11. Readinger ED, Wolter SD, Waltemyer DL, Delucca M, Mohney SE, Prenitzer BI, Giannuzzi LA, Molnar RJ: Wet thermal oxidation of GaN. J Electron Mat 1999, Selleckchem XMU-MP-1 28:257–260.CrossRef 12. Lin LM, Luo Y, Lai PT, Lau KM: Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN. Thin Solid Films 2006, 515:2111–2115.CrossRef 13. Zhou Y, Ahyi C, Smith TI, Bozack M, Tin C, Williams J, Park M, Cheng A, Park J, Kim D, Wang D, Preble EA, Hanser A, Evans K: Formation, etching and electrical characterization of a thermally grown gallium
oxide on the Ga-face of a bulk GaN substrate. Solid State Electron 2008, 52:756–764.CrossRef 14. Reddy VR, Reddy MSP, Lakshmi BP, Kumar AA: Electrical characterization of Au/SiO2/n-GaN metal-insulator-semiconductor structures. J Alloys Compd 2011, 31:8001–8007.CrossRef 15. Arulkumaran S, Egawa T, Ishikawa H, Jimbo T, Umeno M: Investigation of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density. Appl Phys Lett 1998, 73:809–811.CrossRef 16. Chang SJ, Su YK, Chiou YZ, Chiou JR, Huang BR, Chang CS, Chen JF: Deposition of SiO2 layers on GaN by photochemical vapor deposition. J Electrochem Soc 2003, 150:C77-C80.CrossRef 17. Chiou YZ, Su YK, Chang SJ, Gong J, Chang CS, Liu SH: The properties of photo chemical-vapor
deposition SiO2 and its find more application in GaN metal-insulator semiconductor ultraviolet photodetectors. J Electron Mater 2003, 32:395–399.CrossRef 18. Lee M, Ho C, Zeng J: Electrical properties of liquid phase deposited SiO2 on photochemical treated GaN. Electrochem Solid-State Lett 2008, 11:D9-D12.CrossRef 19. Wu HR, Lee KW, Nian TB, Chou DW, Wu JJH, Wang YH, Houng MP, Sze PW, Su YK, Chang SJ, Ho CH, Chiang CI, Chern YT, Juang FS, Wen TC, Lee WI, Chyi
JI: Liquid phase deposited SiO2 on GaN. Mater Chem Phys 2003, 80:329–333.CrossRef 20. Quah HJ, Cheong KY, Hassan Z, Lockman Z: MOS characteristics of metallorganic-decomposed CeO2 spin-coated on GaN. Electrochem Solid-State Lett 2010, 13:H116-H118.CrossRef GBA3 21. Quah HJ, Cheong KY, Hassan Z, Lockman Z: Effects of N2O postdeposition annealing on metal-organic decomposed CeO2 gate oxide spin-coated on GaN substrate. J Electrochem Soc 2011, 158:H423-H432.CrossRef 22. Chang YC, Chiu HC, Lee YJ, Huang ML, Lee KY, Hong M, Chiu YN, Kwo J, Wang YH: Structural and electrical characteristics of atomic layer deposited high k HfO2 on GaN. Appl Phys Lett 2007, 90:232904–1-232904–3. 23. Kim J, Gila BP, Mehandru R, Johnson JW, Shin JH, Lee KP, Luo B, Onstine A, MEK162 mw Abernathy CR, Pearton SJ, Ren F: Electrical characterization of GaN metal-oxide-semiconductor diodes using MgO as the gate oxide. J Electrochem Soc 2002, 149:G482-G484.CrossRef 24. Liu C, Chor EF, Tan LS, Dong Y: Structural and electrical characterizations of the pulsed-laser-deposition-grown Sc2O3/GaN heterostructure. Appl Phys Lett 2006, 88:222113–1-222113–3. 25.