“Production-based removal and replacement has been used as


“Production-based removal and replacement has been used as a method to improve sow herd performance. Limited data are available as to the reliability of this approach. The purpose of this investigation was to use a retrospective case-control study to assess the success of replacement events when herd productivity

was greater or less than the mean for removal events attributed to problems with fertility, fecundity, or old age. For each of 3 herds, 1,000 consecutive sows removed between parities 1 and 6 for reasons of fertility, fecundity, or old age were matched to sows with similar histories MG-132 order that were retained in the herd (controls) and to gilts that were first bred into the herd around the time of the case removal events.

Controls and gilts were followed until their next parity or removal event, and the outcome Lonafarnib in vitro was measured as a standardized calculation of born alive per mated female per year. Herd performance at the time of the case removal events was categorized according to greater or less than the mean for fertility or fecundity on monthly farrowing rates and average piglets born alive per litter. Success of removal/replacement events were evaluated according to removal reason and contemporary herd performance. A model was developed to estimate production and financial implications of changes to productivity-based culling, using a Monte Carlo simulation with a 1,000-iteration run. Born alive per mated female per year from gilts was greater (P = 0.0001) than from controls in 1 of 3 herds when herd fertility was greater than the mean, 1 of 3 herds when herd fertility was less than the mean (P = 0.0065), 3 of 3 herds when herd fecundity was greater than

the mean (P < 0.030), and 2 of 3 herds when herd fecundity was less than the mean (P < 0.020). The financial model sensitivity analysis indicated greater likelihood selleck compound of economic advantage for a scenario without production-based removals in parities 1 to 6.”
“High source doping is required to support the high electric fields necessary to provide sufficient drive currents in interband tunnel field effect transistors (TFETs). High doping is associated with band-tails in the density of states that decay exponentially into the bandgap with decay constants that can be comparable to the room temperature thermal energy k(B)T. This compromises the core operational principal of a TFET of a hard energy cut-off to the injected channel carrier distribution provided by the source valence band edge. If the band-tails are limited to the source region, they have minimal effect for short channels <= 10 nm, since the leakage current is dominated by direct, coherent tunneling through the channel.

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