Phys Rev B 2010, 81:205437 CrossRef 23 Moslemi MR, Sheikhi MH, S

Phys Rev B 2010, 81:205437.CrossRef 23. Moslemi MR, Sheikhi MH, Saghafi K: Moravvej-Farshi MK:Electronic properties of a dual gated GNR-FET under uniaxial tensile strain . Microel Reliability 2012, 52:2579–2584.CrossRef 24. Wu G, Wang Z, Jing Y, Wang C: I–V curves of graphene nanoribbons under uniaxial compressive and tensile strain . Chem Phys Lett 2013, 559:82–87.CrossRef 25. Zhao P, Choudhury M, Mohanram K, Guo J: Computational model of edge effects in graphene

nanoribbon transistors . Nano Res 2008, 1:395–402.CrossRef 26. Kliros GS: Gate capacitance modeling and width-dependent performance of graphene nanoribbon transistors . Microelectron Eng 2013, 112:220–226.CrossRef 27. Mohammadpour H, Asgari A: Numerical study of quantum transport in the double gate graphene nanoribbon field effect

transistors . Physica E 2011, 43:1708–1711.CrossRef 28. Knoch J, Riess W, Appenzeller Belinostat datasheet J: Outperforming the conventional scaling rules in the quantum capacitance limit . IEEE Elect Dev Lett 2008, 29:372–375.CrossRef 29. Gunlycke D, White CT: Tight-binding energy dispersions of armchair-edge graphene nanostrips . Phys Rev B 2008, 77:115116.CrossRef 30. Harrison WA: Electronic structure and the properties of solids: The physics of the chemical bond. New York: Dover Publications; 1989. 31. Blakslee OL, Proctor DG, Seldin EJ, Spence GB, Weng T: Elastic constants of compression-annealed pyrolytic graphite . J Appl Phys 1970, 41:3373–3382.CrossRef 32. Wang J, Zhao HCS assay R, Yang M, Liu Z: Inverse relationship between carrier mobility and bandgap in graphene . J Chem Phys 2013, 138:084701.CrossRef 33. Kliros GS: Modeling of carrier density and quantum capacitance Resminostat in graphene

nanoribbon FETs . In Proc of 21th IEEE Int. Conf. on Microelectronics (ICM). Cairo; 19–22 Dec 2010:236–239. 34. Natori K, Kimura Y, Shimizu T: Characteristics of a carbon nanotube field-MLN4924 nmr effect transistor analyzed as a ballistic nanowire field-effect transistor . J Appl Phys 2005, 97:034306.CrossRef 35. Guo J, Yoon Y: Ouyang Y:Gate electrostatics and quantum capacitance of GNRs . Nano Lett 2007, 7:1935–1940.CrossRef 36. Natori K: Compact modeling of ballistic nanowire MOSFETs . IEEE Trans Elect Dev 2008, 55:2877–2885.CrossRef 37. Kliros GS: Influence of density inhomogeneity on the quantum capacitance of graphene nanoribbon field effect transistors . Superlattice Microst 2012, 52:1093–1102.CrossRef 38. Burke P: AC performance of nanoelectronics: towards a ballistic THz nanotube transistor . Solid State Electron 2004, 48:1981–1986.CrossRef 39. Chauhan J, Guo J: Assessment of high-frequency performance limits of graphene field-effect transistors . Nano Res 2011, 4:571–579.CrossRef 40. Knoch J, Chen Z, Appenzeller J: Properties of metal-graphene contacts . IEEE Trans Nanotechn 2012, 11:513–519.CrossRef 41.

Comments are closed.