The trapped carriers lead to the rise of the internal electrical

The trapped carriers lead to the rise of the internal electrical field at the Ag2S/PVK interface, which can change the conductivity of the device. All the results of the theoretical fitting are consistent with the charge trapping mechanism. Conclusions In summary, organic bistable devices based on Ag2S-PVK composites

were fabricated by a simple see more spin-coating method. Obvious electrical bistability and NDR effects have been observed in the devices due to the existence of the Ag2S nanospheres. The NDR effects can be controlled by varying the charging voltages and charging time. The maximum ON/OFF current ratio can reach up to 104. The carrier transport can be described in terms of the organic electronic models, and the carrier transport mechanism alters from the thermionic

emission to the ohmic model during the transition from OFF state to ON state, which is closely associated with SNS-032 purchase the charge trapping/detrapping process in the Ag2S-PVK composites. Acknowledgements This work was partly supported by the National Science Foundation for Distinguished Young Scholars of China Protein Tyrosine Kinase inhibitor (No. 61125505), the National Natural Science Foundation of China (Grant No. 61108063), and the author (A. W) is also grateful to the financial support from Beijing JiaoTong University (2012RC046). References 1. Yang Y, Ouyang J, Ma L, Tseng RJH, Chu CW: Electrical switching and bistability in organic/polymeric Selleck Obeticholic Acid thin films and memory devices. Adv Funct Mater 2006, 16:1001.CrossRef 2. Mukherjee B, Mukherjee M: Nonvolatile

memory device based on Ag nanoparticle: characteristics improvement. Appl Phys Lett 2009, 94:173510.CrossRef 3. Shim JH, Jung JH, Lee MH, Kim TW, Son DI, Han AN, Kim SW: Memory mechanisms of nonvolatile organic bistable devices based on colloidal CuInS 2 /ZnS core–shell quantum dot – poly( N -vinylcarbazole) nanocomposites. Org Electron 2011, 12:1566.CrossRef 4. Ouyang JY, Chu CW, Szmanda CR, Ma LP, Yang Y: Programmable polymer thin film and non-volatile memory device. Nat Mater 2004, 3:918.CrossRef 5. Ma L, Liu J, Pyo S, Yang Y: Organic bistable light-emitting devices. Appl Phys Lett 2002, 80:362.CrossRef 6. Liu JQ, Yin ZY, Cao XH, Zhao F, Lin AP, Xie LH, Fan QL, Boey F, Zhang H, Huang W: Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes. ACS Nano 2010, 4:3987.CrossRef 7. Li FS, Son D, Ham JH, Kim BJ, Jung JH, Kim TW: Memory effect of nonvolatile bistable devices based on CdSe/ZnS nanoparticles sandwiched between C60 layers. Appl Phys Lett 2007, 91:162109.CrossRef 8. Li FS, Cho SH, Son DI, Park KH, Kim TW: Multilevel nonvolatile memory effects in hybrid devices containing CdSe/ZnS nanoparticle double arrays embedded in the C60 matrices. Appl Phys Lett 2008, 92:102110.CrossRef 9.

Comments are closed.