5 μm) light. Furthermore, a systematic study of the photoresponse was performed, which revealed a clear dependence of the photocurrent, carrier lifetime, and quantum efficiency on the light intensity, defect, and M-S-M structure. Methods InSb nanowires were synthesized using the electrochemical method. A gold (Au) film coated on an AAO (Whatman®, GE Healthcare, Maidstone, UK) membrane was Selleckchem Selumetinib used as a conductive layer to grow the nanowires. The pore diameter of the AAO membrane was approximately 200 nm. The electrolyte consisted of 0.15 M InCl3, 0.1 M
SbCl3, 0.36 M C6H8O7·H2O, and 0.17 M KCl. The solvent of the electrolyte was distilled water. A typical three-electrode electrochemical cell was used during the InSb electrodeposition. The Au film on the AAO membrane was regarded as the working electrode. A platinum wire and an Ag/AgCl electrode were subsequently applied as the counter electrode and the reference electrode, respectively. The deposition time was controlled at 40 min in conditions of a deposition potential of −1.5 V, in contrast to the Ag/AgCl reference electrode at room www.selleckchem.com/products/CP-673451.html temperature. Following the deposition, the sample was removed from the AAO membrane with a 5 wt % NaOH solution and then washed five times with distilled water. The Selleck SBE-��-CD as-prepared
nanowires were examined using field emission scanning electron microscope (FESEM; operated at 10 kV; HITACHI S-4800, Chiyoda-ku, Japan), a desktop X-ray diffractometer (D2 Phaser, Bruker, Madison, Vitamin B12 WI, USA), a high-resolution transmission electron microscope (HRTEM; operated at 200 kV, JEM-2100F, JEOL Ltd., Tokyo, Japan) with energy-dispersive X-ray spectroscope (EDX), and an X-ray photoelectron spectroscope system (PHI600 system, PerkinElmer, Waltham, MA, USA). Furthermore, the transport property was evaluated using the InSb nanowires further fabricated into a field-effect transistor (FET). The synthesized InSb nanowires
were dispersed uniformly in ethanol and dropped on a SiO2/p-Si substrate. The Si substrate was applied as a back-gate. After drying out the suspension, the Ti/Cu (20/120 nm) electrodes were deposited on the two ends of the nanowire through photolithograph, e-beam evaporation, and lift-off processes. Additionally, the InSb nanowire-based M-S-M structure photodetectors were fabricated through a microfabrication process and focused ion beam (FIB) technique. Here, the pattern of Ti/Au (20/120 nm) electrode was fabricated using standard lithographic methods on a SiO2/Si substrate. The synthesized InSb nanowires were transferred onto a SiO2/Si substrate with pre-patterned Ti/Au electrodes. Subsequently, the FIB instrument (Dual-Beam Helios 600i, FEI, Shanghai, China) was used to deposit Pt, which connects the wires between the Ti/Au electrodes. Finally, The Pt-InSb-Pt (M-S-M) photodetector structure of back-to-back Schottky contacts was obtained. To evaluate the M-S-M photodetectors, a M-IR light at a 5.